| 1 |
General aspects of the vapor growth of semiconductor crystals - A study based on DF1 simulations of the NH3/NH2 covered GaN(0001) surface in hydrogen ambient
Kempisty P, Strak P, Sakowski K, Krukowski S
Journal of Crystal Growth, 390, 71, 2014 |
| 2 |
Adsorption of gallium on GaN(0001) surface in ammonia-rich conditions: A new effect associated with the Fermi level position
Kempisty P, Strak P, Sakowski K, Krukowski S
Journal of Crystal Growth, 401, 78, 2014 |
| 3 |
Adsorption of ammonia on hydrogen covered GaN(0001) surface - Density Functional Theory study
Kempisty P, Strak P, Sakowski K, Krukowski S
Journal of Crystal Growth, 401, 514, 2014 |
| 4 |
Doping effects in InNI/GaN short-period quantum well structures-Theoretical studies based on density functional methods
Strak P, Kempisty P, Sakowski K, Krukowski S
Journal of Crystal Growth, 401, 652, 2014 |
| 5 |
DFT study of ammonia desorption from the GaN(0001) surface covered with a NH3/NH2 mixture
Kempisty P, Strak P, Sakowski K, Krukowski S
Journal of Crystal Growth, 403, 105, 2014 |
