검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
The impact of gate to drain spacing on hot-carrier degradation in sub-100 nm Ni-Pt salicidation FinFETs Lee SM, Lee HD, Ok I, Oh J Solid-State Electronics, 114, 167, 2015 |
| 2 |
Strain induced by Ti salicidation in sub-quarter-micron CMOS devices, as measured by TEM/CBED Benedetti A, Cullis AG, Armigliato A, Balboni R, Frabboni S, Mastracchio GF, Pavia G Applied Surface Science, 188(1-2), 214, 2002 |