검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies Chen XY, Johansen JA, Salm C, van Rheenen AD Solid-State Electronics, 45(11), 1967, 2001 |
| 2 |
Diffusion and Electrical-Properties of Boron and Arsenic Doped Poly-Si and Poly-Gexsi1-X (X-Similar-to-0.3) as Gate Material for Sub-0.25 Mu-M Complementary Metal-Oxide-Semiconductor Applications Salm C, Vanveen DT, Gravesteijn DJ, Holleman J, Woerlee PH Journal of the Electrochemical Society, 144(10), 3665, 1997 |