검색결과 : 2건
No. | Article |
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1 |
Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition Damlencourt JF, Renault O, Samour D, Papon AM, Leroux C, Martin F, Marthon S, Semeria MN, Garros X Solid-State Electronics, 47(10), 1613, 2003 |
2 |
Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si Renault O, Samour D, Rouchon D, Holliger P, Papon AM, Blin D, Marthon S Thin Solid Films, 428(1-2), 190, 2003 |