화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition
Damlencourt JF, Renault O, Samour D, Papon AM, Leroux C, Martin F, Marthon S, Semeria MN, Garros X
Solid-State Electronics, 47(10), 1613, 2003
2 Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si
Renault O, Samour D, Rouchon D, Holliger P, Papon AM, Blin D, Marthon S
Thin Solid Films, 428(1-2), 190, 2003