| 1 |
New method to extract the model parameters of solar cells from the explicit analytic solutions of their illuminated I-V characteristics
Ortiz-Conde A, Sanchez FJG, Muci J
Solar Energy Materials and Solar Cells, 90(3), 352, 2006 |
| 2 |
Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain current
Ortiz-Conde A, Sanchez FJG
Solid-State Electronics, 50(11-12), 1796, 2006 |
| 3 |
Extraction of non-ideal junction model parameters from the explicit analytic solutions of its I-V characteristics
Ortiz-Conde A, Sanchez FJG
Solid-State Electronics, 49(3), 465, 2005 |
| 4 |
Rigorous analytic solution for the drain current of undoped symmetric dual-gate MOSFETs
Ortiz-Conde A, Sanchez FJG, Muci J
Solid-State Electronics, 49(4), 640, 2005 |
| 5 |
A method to evaluate the location of the maximum value of a function with high level of noise
Ortiz-Conde A, Sanchez FJG, Caralli-D'Ambrosio A
Solid-State Electronics, 47(1), 93, 2003 |
| 6 |
Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom
Ortiz-Conde A, Sanchez FJG, Guzman M
Solid-State Electronics, 47(11), 2067, 2003 |
| 7 |
New method for determination of harmonic distortion in SOIFD transistors
Cerdeira A, Estrada M, Quintero R, Flandre D, Ortiz-Conde A, Sanchez FJG
Solid-State Electronics, 46(1), 103, 2002 |
| 8 |
Extraction method for polycrystalline TFT above and below threshold model parameters
Estrada M, Cerdeira A, Ortiz-Conde A, Sanchez FJG, Iniguez B
Solid-State Electronics, 46(12), 2295, 2002 |
| 9 |
Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction
Ortiz-Conde A, Estrada M, Cerdeira A, Sanchez FJG, De Mercato G
Solid-State Electronics, 45(2), 223, 2001 |
| 10 |
A simple procedure to extract the threshold voltage of amorphous thin film MOSFETs in the saturation region
Ortiz-Conde A, Cerdeira A, Estrada M, Sanchez FJG, Quintero R
Solid-State Electronics, 45(5), 663, 2001 |
