검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions Ma PX, Linder M, Sanden M, Zhang SL, Ostling M, Chang MCF Solid-State Electronics, 45(1), 159, 2001 |
| 2 |
A low-complexity 62-GHz f(T) SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget Grahn JV, Fosshaug H, Jargelius M, Jonsson P, Linder M, Malm BG, Mohadjeri B, Pejnefors J, Radamson HH, Sanden M, Wang YB, Landgren G, Ostling M Solid-State Electronics, 44(3), 549, 2000 |
| 3 |
Characterization of in-Situ Phosphorus-Doped Polycrystalline Silicon Films Grown by Disilane-Based Low-Pressure Chemical-Vapor-Deposition Grahn JV, Pejnefors J, Sanden M, Zhang SL, Ostling M Journal of the Electrochemical Society, 144(11), 3952, 1997 |