화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 An N-terminal Flag-tag impairs TPP1 regulation of telomerase function
Sandhu R, Wei D, Sharma M, Xu LF
Biochemical and Biophysical Research Communications, 512(2), 230, 2019
2 Guiding Image Segmentation on the Fly: Interactive Segmentation From a Feedback Control Perspective
Zhu LJ, Karasev P, Kolesov I, Sandhu R, Tannenbaum A
IEEE Transactions on Automatic Control, 63(10), 3276, 2018
3 Control of meiotic pairing and recombination by chromosomally tethered 26S proteasome
Ahuja JS, Sandhu R, Mainpal R, Lawson C, Henley H, Hunt PA, Yanowitz JL, Borner GV
Science, 355(6323), 408, 2017
4 The surface morphology of hydrogen-exfoliated InP and exfoliation parameters
Hayashi S, Sandhu R, Goorsky MS
Journal of the Electrochemical Society, 154(4), H293, 2007
5 Development of 6.00 A graded metamorphic buffer layers and high performance In0.86Al0.14As/In0.86Ga0.14As heterojunction bipolar transistor devices
Cavus A, Sandhu R, Monier C, Cox C, Pascua D, Gutierrez-Aitken A, Noori A, Hayashi S, Goorsky M
Journal of Vacuum Science & Technology B, 24(3), 1492, 2006
6 X-ray diffraction imaging of GaN-based heterostructures on SiC
Poust B, Feichtinger P, Sandhu R, Smorchkova I, Heying B, Block T, Wojtowicz M, Goorsky M
Materials Science Forum, 457-460, 1601, 2004
7 Interfacial roughness and carrier scattering due to misfit dislocations in In0.52Al0.48As/In0.75Ga0.25As/InP structures
Naidenkova M, Goorsky MS, Sandhu R, Hsing R, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 20(3), 1205, 2002
8 Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Goorsky MS, Sandhu R, Hsing R, Naidenkova M, Wojtowicz M, Chin TP, Block TR, Streit DC
Journal of Vacuum Science & Technology B, 18(3), 1658, 2000