| 1 |
On the Mechanism of Boron Incorporation During Silicon Epitaxy by Means of Chemical-Vapor-Deposition
Kuhne H, Fischer A, Ozturk MC, Sanganeria MK
Journal of the Electrochemical Society, 143(2), 634, 1996 |
| 2 |
Boron Incorporation in Epitaxial Silicon Using Si2H6 and B2H6 in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor
Sanganeria MK, Violette KE, Ozturk MC, Harris G, Maher DM
Journal of the Electrochemical Society, 142(1), 285, 1995 |
| 3 |
Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition of Epitaxial Silicon Onto (100)Silicon .1. The Influence of Prebake on (Epitaxy Substrate) Interfacial Oxygen and Carbon Levels
Sanganeria MK, Ozturk MC, Harris G, Violette KE, Ban I, Lee CA, Maher DM
Journal of the Electrochemical Society, 142(11), 3961, 1995 |
| 4 |
Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition of Epitaxial Silicon on (100)Silicon .2. Carbon Incorporation into Layers and at Interfaces of Multilayer Structures
Sanganeria MK, Ozturk MC, Harris G, Violette KE, Lee CA, Maher DM
Journal of the Electrochemical Society, 142(11), 3970, 1995 |
| 5 |
Growth-Kinetics, Silicon Nucleation on Silicon Dioxide, and Selective Epitaxy Using Disilane and Hydrogen in an Ultrahigh-Vacuum Rapid Thermal Chemical-Vapor-Deposition Reactor
Violette KE, Sanganeria MK, Ozturk MC, Harris G, Maher DM
Journal of the Electrochemical Society, 141(11), 3269, 1994 |
