화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Investigation of lateral RESURF, 6H-SiC MOSFETs
Agarwal AK, Saks NS, Mani SS, Hegde VS, Sanger PA
Materials Science Forum, 338-3, 1307, 2000
2 100 kHz operation of SiC Junction Controlled Thyristor (JCT) switches used in an all-SIC PWM inverter
Seshadri S, Hall WB, Kotvas JC, Sanger PA
Materials Science Forum, 338-3, 1403, 2000
3 Surface roughness of reactive ion etched 4H-SiC in SF6/O-2 and CHF3/H-2/O-2 plasmas
Casady JB, Mani SS, Siergiej RR, Urban W, Balakrishna V, Sanger PA, Brandt CD
Journal of the Electrochemical Society, 145(4), L58, 1998