검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration Ahopelto J, Ardila G, Baldi L, Balestra F, Belot D, Fagas G, De Gendt S, Demarchi D, Fernandez-Bolanos M, Holden D, Ionescu AM, Meneghesso G, Mocuta A, Pfeffer M, Popp RM, Sangiorgi E, Torres CMS Solid-State Electronics, 155, 7, 2019 |
| 2 |
Analysis of the impact of geometrical and technological parameters on recombination losses in interdigitated back-contact solar cells Zanuccoli M, Magnone P, Sangiorgi E, Fiegna C Solar Energy, 116, 37, 2015 |
| 3 |
Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications Paternoster G, Zanuccoli M, Bellutti P, Ferrario L, Ficorella F, Fiegna C, Magnone P, Mattedi F, Sangiorgi E Solar Energy Materials and Solar Cells, 134, 407, 2015 |
| 4 |
Influence of bias and temperature conditions on NBTI physical mechanisms in p-channel power U-MOSFETs Tallarico AN, Magnone P, Barletta G, Magri A, Sangiorgi E, Fiegna C Solid-State Electronics, 108, 42, 2015 |
| 5 |
Numerical simulation and modeling of thermal transient in silicon power devices Magnone P, Fiegna C, Greco G, Bazzano G, Rinaudo S, Sangiorgi E Solid-State Electronics, 88, 69, 2013 |
| 6 |
Simulation of self-heating effects in different SOI MOS architectures Braccioli M, Curatola G, Yang Y, Sangiorgi E, Fiegna C Solid-State Electronics, 53(4), 445, 2009 |
| 7 |
A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs Palestri P, Alexander C, Asenov A, Aubry-Fortuna V, Baccarani G, Bournel A, Braccioli M, Cheng B, Dollfus P, Esposito A, Esseni D, Fenouillet-Beranger C, Fiegna C, Fiori G, Ghetti A, Iannaccone G, Martinez A, Majkusiak B, Monfray S, Peikert V, Reggiani S, Riddet C, Saint-Martin J, Sangiorgi E, Schenk A, Selmi L, Silvestri L, Toniutti P, Walczak J Solid-State Electronics, 53(12), 1293, 2009 |
| 8 |
Reduced self-heating by strained silicon substrate engineering O'Neill A, Agaiby R, Olsen S, Yang Y, Hellstrom PE, Ostling M, Oehme M, Lyutovich K, Kasper E, Eneman G, Verheyen P, Loo R, Claeys C, Fiegna C, Sangiorgi E Applied Surface Science, 254(19), 6182, 2008 |
| 9 |
Monte-Carlo simulation of MOSFETs with band offsets in the source and drain Braccioli M, Palestri P, Mouis M, Poiroux T, Vinet M, Le Carval G, Fiegna C, Sangiorgi E, Deleonibus S Solid-State Electronics, 52(4), 506, 2008 |
| 10 |
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs Sangiorgi E, Palestri P, Esseni D, Fiegna C, Selmi L Solid-State Electronics, 52(9), 1414, 2008 |