검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
High-Purity Versus High-Defect-Density Semiinsulating Substrates for SIC MESFET: Simulation of Device Characteristics Koshka Y, Sankin I Materials Science Forum, 483, 869, 2005 |
| 2 |
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB Materials Science Forum, 483, 885, 2005 |
| 3 |
Investigation of two-stage activation annealing of Al-implanted 4H-SiC layers Merrett JN, Scofield JD, Tsao BH, Mazzola M, Seale D, Draper WA, Sankin I, Casady JB, Bondarenko V Materials Science Forum, 457-460, 921, 2004 |
| 4 |
Design and implementation of the optimized edge termination in 1.8 W4H-SiC PiN diodes Sankin I, Draper WA, Merrett JN, Casady JRB, Casady JB Materials Science Forum, 457-460, 1101, 2004 |
| 5 |
Assessment of "normally on" and "quasi on" SiCVJFET's in half-bridge circuits Mazzola MS, Casady JB, Merrett N, Sankin I, Draper W, Seale D, Bondarenko V, Koshka Y, Gafford J, Kelley R Materials Science Forum, 457-460, 1153, 2004 |
| 6 |
A review of SiC power switch: achievements, difficulties and perspectives Sankin I, Merrett JN, Draper WA, Casady JRB, Casady JB Materials Science Forum, 457-460, 1249, 2004 |
| 7 |
Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination Sankin I, Dufrene JB, Merrett JN, Casady JB Materials Science Forum, 433-4, 879, 2002 |
| 8 |
On development of 6H-SiC LDMOS transistors using silane-ambient implant anneal Sankin I, Casady JB, Dufrene JB, Draper WA, Kretchmer J, Vandersand J, Kumar V, Mazzola MS, Saddow SE Solid-State Electronics, 45(9), 1653, 2001 |