화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application
Poisson MADF, Magis M, Tordjman M, Di Persio J, Langer R, Toth L, Pecz B, Guziewicz M, Thorpe J, Aubry R, Morvan E, Sarazin N, Gaquiere C, Meneghesso G, Hoel V, Jacquet JC, Delage S
Journal of Crystal Growth, 310(23), 5232, 2008
2 In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD
Poisson MADF, Sarazin N, Magis M, Tordjman M, Morvan E, Aubry R, di Persio J, Grimbert B
Journal of Crystal Growth, 298, 826, 2007
3 Structural characterisation of GaAlN/GaN HEMT heterostructures
Sarazin N, Durand O, Magis M, Poisson MADF, Di Persio J
Applied Surface Science, 253(1), 228, 2006
4 LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide: application to HEMT devices
Poisson MAD, Magis M, Tordjman M, Aubry R, Sarazin N, Peschang M, Morvan E, Delage SL, di Persio J, Quere R, Grimbert B, Hoel V, Delos E, Ducatteau D, Gaquiere C
Journal of Crystal Growth, 272(1-4), 305, 2004