| 1 |
Strain relaxation of epitaxial SiGe layer and Ge diffusion during Ni silicidation on cap-Si/SiGe/Si(001)
Jang CH, Sardela MR, Kim SH, Song YJ, Lee NE
Applied Surface Science, 252(15), 5326, 2006 |
| 2 |
In situ X-ray diffraction study of electric-field-induced domain switching and phase transition in PZT-5H
Liu M, Hsia KJ, Sardela MR
Journal of the American Ceramic Society, 88(1), 210, 2005 |
| 3 |
Strain relaxation of epitaxial CoSi2 and SiGe layers in cap-Si/Si0.83Ge0.17/Si(001) and epi-CoSi2/Si0.83Ge0.17/Si(001) structures
Shin DO, Sardela MR, Ban SH, Lee NE, Shim KH
Applied Surface Science, 237(1-4), 139, 2004 |
| 4 |
Growth of single crystalline 3C-SiC and AlN on Si using porous Si as a compliant seed crystal
Purser D, Jenkins M, Lieu D, Vaccaro F, Faik A, Hasan MA, Leamy HJ, Carlin C, Sardela MR, Zhao QX, Willander M, Karlsteen M
Materials Science Forum, 338-3, 313, 2000 |
| 5 |
Electrical and Structural Characterization of PtSi/P-Si1-xGex Low Schottky-Barrier Junctions Prepared by Cosputtering
Nur O, Willander M, Turan R, Sardela MR, Radamson HH, Hansson GV
Journal of Vacuum Science & Technology B, 15(2), 241, 1997 |
| 6 |
Thermal Relaxation Kinetics of Strained Si/Si1-xGex Heterostructures Determined by Direct Measurement of Mosaicity and Lattice-Parameter Variations
Sardela MR, Hansson GV
Journal of Vacuum Science & Technology A, 13(2), 314, 1995 |
