화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Extracting the Schottky barrier height from axial contacts to semiconductor nanowires
Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE
Solid-State Electronics, 54(7), 689, 2010
2 Fowler-Nordheim and hot carrier reliabilities of U-shaped trench-gated transistors studied by three terminal charge pumping
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Thin Solid Films, 504(1-2), 302, 2006
3 Modified three terminal charge pumping technique applied to vertical transistor structures
Passmore LJ, Sarpatwari K, Suliman SA, Awadelkarim OO, Ridley R, Dolny G, Michalowicz J, Wu CT
Journal of Vacuum Science & Technology B, 23(5), 2189, 2005