검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Exit angle dependence of charge-state distribution of backscattered He ions Sasakawa K, Nakajima K, Suzuki M, Kimura K Applied Surface Science, 256(4), 965, 2009 |
| 2 |
High-resolution Rutherford backscattering spectrometry study on process dependent elemental depth profile change of hafnium silicate on silicon Ichihara C, Yasuno S, Takeuchi H, Kobayashi A, Mure S, Fujikawa K, Sasakawa K Journal of Vacuum Science & Technology A, 27(4), 937, 2009 |
| 3 |
Interlayer analysis of HfO2/SiO2/Si by SIMS and HRBS Sasakawa K, Fujikawa K, Toyoda T Applied Surface Science, 255(4), 1551, 2008 |
| 4 |
Morphological evolution of Al whiskers grown by high temperature glancing angle deposition Suzuki M, Nagai K, Kinoshita S, Nakajima K, Kimura K, Okano T, Sasakawa K Journal of Vacuum Science & Technology A, 25(4), 1098, 2007 |
| 5 |
Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: round-robin test Toujou F, Yoshikawa S, Homma Y, Takano A, Takenaka H, Tomita M, Li Z, Hasegawa T, Sasakawa K, Schuhmacher M, Merkulov A, Kim HK, Moon DW, Hong T, Won JY Applied Surface Science, 231-2, 649, 2004 |