| 1 |
Etching of SiO2 in C4F8/Ar plasmas. I. Numeric kinetics modeling and Monte Carlo simulation in a three-dimensional profile simulator
Guo W, Sawin HH
Journal of Vacuum Science & Technology A, 28(2), 250, 2010 |
| 2 |
Etching of SiO2 in C4F8/Ar plasmas. II. Simulation of surface roughening and local polymerization
Guo W, Sawin HH
Journal of Vacuum Science & Technology A, 28(2), 259, 2010 |
| 3 |
Mixing-layer kinetics model for plasma etching and the cellular realization in three-dimensional profile simulator
Guo W, Bai B, Sawin HH
Journal of Vacuum Science & Technology A, 27(2), 388, 2009 |
| 4 |
Modeling of the angular dependence of plasma etching
Guo W, Sawin HH
Journal of Vacuum Science & Technology A, 27(6), 1326, 2009 |
| 5 |
Surface roughening of silicon, thermal silicon dioxide, and low-k dielectric coral films in argon plasma
Yin YP, Sawin HH
Journal of Vacuum Science & Technology A, 26(1), 151, 2008 |
| 6 |
Angular etching yields of polysilicon and dielectric materials in Cl-2/Ar and fluorocarbon plasmas
Yin YP, Sawin HH
Journal of Vacuum Science & Technology A, 26(1), 161, 2008 |
| 7 |
Impact of etching kinetics on the roughening of thermal SiO2 and low-k dielectric coral films in fluorocarbon plasmas
Yin YP, Sawin HH
Journal of Vacuum Science & Technology A, 25(4), 802, 2007 |
| 8 |
Postsilicon oxide etch cleaning process using integrated ashing and an HF vapor process
Kwon O, Sawin HH
Journal of the Electrochemical Society, 153(6), G515, 2006 |
| 9 |
Surface kinetics modeling of silicon and silicon oxide plasma etching. I. Effect of neutral and ion fluxes on etching yield of silicon oxide in fluorocarbon plasmas
Kwon O, Sawin HH
Journal of Vacuum Science & Technology A, 24(5), 1906, 2006 |
| 10 |
Surface kinetics modeling of silicon and silicon oxide plasma etching. II. Plasma etching surface kinetics modeling using translating mixed-layer representation
Kwon O, Sawin HH
Journal of Vacuum Science & Technology A, 24(5), 1914, 2006 |
