화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Vanadium-free semi-insulating 4H-SiC substrates
Mitchel WC, Saxler A, Perrin R, Goldstein J, Smith SR, Evwaraye AO, Solomon JS, Brady M, Tsvetkov V, Carter CH
Materials Science Forum, 338-3, 21, 2000
2 Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide
Capano MA, Cooper JA, Melloch MR, Saxler A, Mitchel WC
Materials Science Forum, 338-3, 703, 2000
3 MicroRaman and Hall effect study of n-type bulk 4H-SiC
Chafai M, Jimenez J, Martin E, Mitchel WC, Saxler A, Perrin R
Materials Science Forum, 338-3, 707, 2000