검색결과 : 11건
No. | Article |
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1 |
Crystal Structure of Magnetoelectric Ba2MnGe2O7 at Room and Low Temperatures by Neutron Diffraction Sazonov A, Hutanu V, Meven M, Roth G, Georgii R, Masuda T, Nafradi B Inorganic Chemistry, 57(9), 5089, 2018 |
2 |
Expression of adenosine receptors in monocytes from patients with bronchial asthma Yuryeva K, Saltykova I, Ogorodova L, Kirillova N, Kulikov E, Korotkaya E, Iakovleva Y, Feoktistov I, Sazonov A, Ryzhov S Biochemical and Biophysical Research Communications, 464(4), 1314, 2015 |
3 |
Study of deposition temperature on high crystallinity nanocrystalline silicon thin films with in-situ hydrogen plasma-passivated grains Lee CH, Wong WS, Sazonov A, Nathan A Thin Solid Films, 597, 151, 2015 |
4 |
Boron-doped nanocrystalline silicon thin films for solar cells Fathi E, Vygranenko Y, Vieira M, Sazonov A Applied Surface Science, 257(21), 8901, 2011 |
5 |
Nanocrystalline p-layer for a-Si:H p-i-n solar cells and photodiodes Vygranenko Y, Fathi E, Sazonov A, Vieira M, Nathan A Solar Energy Materials and Solar Cells, 94(11), 1860, 2010 |
6 |
High-performance n-channel 13.56 MHz plasma-enhanced chemical vapor deposition nanocrystalline silicon thin-film transistors Lee CH, Sazonov A, Nathan A Journal of Vacuum Science & Technology A, 24(3), 618, 2006 |
7 |
Sub-100 degrees C a-Si : H thin-film transistors on plastic substrates with silicon nitride gate dielectrics Sazonov A, McArthur C Journal of Vacuum Science & Technology A, 22(5), 2052, 2004 |
8 |
Amorphous silicon nitride deposited at 120 degrees C for organic light emitting display-thin film transistor arrays on plastic substrates Stryahilev D, Sazonov A, Nathan A Journal of Vacuum Science & Technology A, 20(3), 1087, 2002 |
9 |
120 degrees C fabrication technology for a-Si : H thin film transistors on flexible polyimide substrates Sazonov A, Nathan A Journal of Vacuum Science & Technology A, 18(2), 780, 2000 |
10 |
High resolution infrared spectroscopy of the CO2-Br-2 weakly bound complex Sazonov A, Beaudet RA Journal of Physical Chemistry A, 102(17), 2792, 1998 |