| 1 |
The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
Protasov DY, Zhuravlev KS
Solid-State Electronics, 129, 66, 2017 |
| 2 |
Understanding the role of mobility of ITO films for silicon heterojunction solar cell applications
Valla A, Carroy P, Ozanne F, Munoz D
Solar Energy Materials and Solar Cells, 157, 874, 2016 |
| 3 |
Growth variations and scattering mechanisms in metamorphic In0.75Ga0.25As/In-0.75 Al0.25As quantum wells grown by molecular beam epitaxy
Chen C, Farrer I, Holmes SN, Sfigakis F, Fletcher MP, Beere HE, Ritchie DA
Journal of Crystal Growth, 425, 70, 2015 |
| 4 |
Low-temperature electrical characterization of junctionless transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 80, 135, 2013 |
| 5 |
Detailed investigation of effective field, hole mobility and scattering mechanisms in GeOI and Ge pMOSFETs
Van Den Daele W, Le Royer C, Augendre E, Mitard J, Ghibaudo G, Cristoloveanu S
Solid-State Electronics, 59(1), 25, 2011 |
| 6 |
Modelling of the hole mobility in p-channel MOS transistors fabricated on (110) oriented silicon wafers
Gaubert P, Teramoto A, Ohmi T
Solid-State Electronics, 54(4), 420, 2010 |
| 7 |
Electron properties of n- and p-CuInSe2
Gorley PM, Khomyak VV, Vorobiev YV, Gonzalez-Hernandez JD, Horley PP, Galochkina OO
Solar Energy, 82(2), 100, 2008 |
| 8 |
Scattering mechanism of transparent conducting tin oxide films prepared by magnetron sputtering
Kim IH, Ko JH, Kim D, Lee KS, Lee TS, Jeong JH, Cheong B, Baik YJ, Kim WM
Thin Solid Films, 515(4), 2475, 2006 |
| 9 |
Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25/As two-dimensional electron gases
Capotondi F, Blasiol G, Ercolani D, Sorba L
Journal of Crystal Growth, 278(1-4), 538, 2005 |
| 10 |
Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas
Lucci L, Palestri P, Esseni D, Selmi L
Solid-State Electronics, 49(9), 1529, 2005 |
