검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Metal-Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control Peter AP, Martens K, Rampelberg G, Toeller M, Ablett JM, Meersschaut J, Cuypers D, Franquet A, Detavernier C, Rueff JP, Schaekers M, Van Elshocht S, Jurczak M, Adelmann C, Radu IP Advanced Functional Materials, 25(5), 679, 2015 |
| 2 |
Crystallization and semiconductor-metal switching behavior of thin VO2 layers grown by atomic layer deposition Rampelberg G, Deduytsche D, De Schutter B, Premkumar PA, Toeller M, Schaekers M, Martens K, Radu I, Detavernier C Thin Solid Films, 550, 59, 2014 |
| 3 |
Effective Electrical Passivation of Ge(100) for HfO2 Gate Dielectric Layers Using O-2 Plasma Xie Q, Deduytsche D, Schaekers M, Caymax M, Delabie A, Qu XP, Detavernier C Electrochemical and Solid State Letters, 14(5), G20, 2011 |
| 4 |
TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer Xie Q, Musschoot J, Schaekers M, Caymax M, Delabie A, Lin D, Qu XP, Jiang YL, Van den Berghe S, Detavernier C Electrochemical and Solid State Letters, 14(5), G27, 2011 |
| 5 |
Development of ALD HfZrOx with TDEAH/TDEAZ and H2O Shi X, Tielens H, Takeoka S, Nakabayashi T, Nyns L, Adelmann C, Delabie A, Schram T, Ragnarsson L, Schaekers M, Date L, Schreutelkamp R, Van Elshocht S Journal of the Electrochemical Society, 158(1), H69, 2011 |
| 6 |
Quantitative analysis of trace metals in silicon nitride films by a vapor phase decomposition/solution collection approach Vereecke G, Schaekers M, Verstraete K, Arnauts S, Heyns MM, Plante W Journal of the Electrochemical Society, 147(4), 1499, 2000 |