검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Modeling, optimization, and growth of GaN in a vertical halide vapor-phase epitaxy bulk reactor Hemmingsson C, Pozina G, Heuken M, Schineller B, Monemar B Journal of Crystal Growth, 310(5), 906, 2008 |
| 2 |
Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor Hemmingsson C, Paskov PP, Pozina G, Heuken M, Schineller B, Monemar B Journal of Crystal Growth, 300(1), 32, 2007 |
| 3 |
Important aspects for the mass production of GaN-based quantum devices grown by MOCVD Soellner J, Schoen O, Alam A, Schineller B, Kaeppeler J, Heuken M Thin Solid Films, 515(10), 4362, 2007 |
| 4 |
MOVPE growth of InAlAs using TBAs and DitBuSi for HEMT applications Keiper D, Velling P, Brennemann A, Agethen M, van den Berg C, Bertenburg RM, Schineller B, Heuken M Journal of Crystal Growth, 248, 153, 2003 |
| 5 |
Auger depth profile analysis and EFTEM analysis of annealed Ti/Al-contacts on Si-doped GaN Pidun M, Karduck P, Mayer J, Heime K, Schineller B, Walther T Applied Surface Science, 179(1-4), 213, 2001 |
| 6 |
Experimental and theoretical investigations of the electrical properties of undoped and magnesium-doped GaN layers Nguyen ND, Germain M, Schmeits M, Evrard R, Schineller B, Heuken M Journal of Crystal Growth, 230(3-4), 596, 2001 |