검색결과 : 25건
| No. | Article |
|---|---|
| 1 |
Toward the Understanding of Stacked Al-Based High-k Dielectrics for Passivation of 4H-SiC Devices Usman M, Hallen A, Pilvi T, Schoner A, Leskela M Journal of the Electrochemical Society, 158(1), H75, 2011 |
| 2 |
Toward 4H-SiC MISFETs Devices Based on ONO (SiO2-Si3N4-SiO2) Structures Esteve R, Reshanov SA, Savage S, Bakowski M, Kaplan W, Persson S, Schoner A, Zetterling CM Journal of the Electrochemical Society, 158(5), H496, 2011 |
| 3 |
MOS Capacitors Fabricated on 3C-SiC(111) Layers Grown on 6H-SiC(0001) Lorenzzi J, Esteve R, Jegenyes N, Reshanov SA, Schoner A, Ferro G Journal of the Electrochemical Society, 158(6), H630, 2011 |
| 4 |
Metallic iron for environmental remediation: Learning from electrocoagulation Noubactep C, Schoner A Journal of Hazardous Materials, 175(1-3), 1075, 2010 |
| 5 |
Fe-0-based alloys for environmental remediation: Thinking outside the box Noubactep C, Schoner A Journal of Hazardous Materials, 165(1-3), 1210, 2009 |
| 6 |
Formation of precipitates in heavily boron doped 4H-SiC Linnarsson MK, Janson MS, Nordell N, Wong-Leung J, Schoner A Applied Surface Science, 252(15), 5316, 2006 |
| 7 |
Mechanism of uranium removal from the aqueous solution by elemental iron Noubactep C, Schoner A, Meinrath G Journal of Hazardous Materials, 132(2-3), 202, 2006 |
| 8 |
PVT-growth and characterization of single crystalline 3C-SiC on a (0001) 6H-SiC substrate Polychroniadis E, Mantzari A, Freudenberg A, Wollweber J, Nitschke R, Frank T, Pensl G, Schoner A Materials Science Forum, 483, 319, 2005 |
| 9 |
Hall effect in the channel of 3C-SiC MOSFETs Krieger M, Pensl G, Bakowski M, Schoner A, Nagasawa H, Abe M Materials Science Forum, 483, 441, 2005 |
| 10 |
Low density of interface states in n-type 4H-SiC MOS capacitors achieved by nitrogen implantation Ciobanu F, Pensl G, Afanas'ev VV, Schoner A Materials Science Forum, 483, 693, 2005 |