화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts
Chen J, Lv JB, Wang QS
Thin Solid Films, 616, 145, 2016
2 Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics
Toyoshima Y, Horiba K, Oshima M, Ohta J, Fujioka H, Miki H, Ueda S, Yamashita Y, Yoshikawa H, Kobayashi K
Applied Surface Science, 255(5), 2149, 2008
3 Effect of thermal treatment for Pd and PdSi Schottky contacts on p-GaN
Tan CK, Aziz AA, Yam FK, Lim CW, Hassan Z, Hudeish AY
Materials Science Forum, 517, 242, 2006
4 The study of thermal treatment on electrical properties at Cr/p-GaN
Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY
Materials Science Forum, 517, 247, 2006
5 Pinning fermi level of p-GaN due to three different (Zr, Ti, and Cr) metal contact
Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY
Materials Science Forum, 517, 262, 2006
6 The electronic characteristics of IrSi thin films
Ma XY
Materials Science Forum, 475-479, 3363, 2005
7 Band offsets of wide-band-gap oxides and implications for future electronic devices
Robertson J
Journal of Vacuum Science & Technology B, 18(3), 1785, 2000
8 Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process
Hasegawa H, Sato T, Kaneshiro C
Journal of Vacuum Science & Technology B, 17(4), 1856, 1999
9 Contacts on Si1-x-yGexCy alloys : Electrical properties and thermal stability
Aubry-Fortuna V, Barthula M, Perrossier JL, Meyer F, Demuth V, Strunk HP, Chaix-Pluchery O
Journal of Vacuum Science & Technology B, 16(3), 1659, 1998
10 Electronic-Properties of Ideal and Interface-Modified Metal-Semiconductor Interfaces
Monch W
Journal of Vacuum Science & Technology B, 14(4), 2985, 1996