검색결과 : 10건
No. | Article |
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1 |
Electronic properties of Al/MoO3/p-InP enhanced Schottky barrier contacts Chen J, Lv JB, Wang QS Thin Solid Films, 616, 145, 2016 |
2 |
Analysis of ITO/Mg:GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics Toyoshima Y, Horiba K, Oshima M, Ohta J, Fujioka H, Miki H, Ueda S, Yamashita Y, Yoshikawa H, Kobayashi K Applied Surface Science, 255(5), 2149, 2008 |
3 |
Effect of thermal treatment for Pd and PdSi Schottky contacts on p-GaN Tan CK, Aziz AA, Yam FK, Lim CW, Hassan Z, Hudeish AY Materials Science Forum, 517, 242, 2006 |
4 |
The study of thermal treatment on electrical properties at Cr/p-GaN Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY Materials Science Forum, 517, 247, 2006 |
5 |
Pinning fermi level of p-GaN due to three different (Zr, Ti, and Cr) metal contact Tan CK, Aziz AA, Hassan Z, Yam FK, Lim CW, Hudeish AY Materials Science Forum, 517, 262, 2006 |
6 |
The electronic characteristics of IrSi thin films Ma XY Materials Science Forum, 475-479, 3363, 2005 |
7 |
Band offsets of wide-band-gap oxides and implications for future electronic devices Robertson J Journal of Vacuum Science & Technology B, 18(3), 1785, 2000 |
8 |
Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process Hasegawa H, Sato T, Kaneshiro C Journal of Vacuum Science & Technology B, 17(4), 1856, 1999 |
9 |
Contacts on Si1-x-yGexCy alloys : Electrical properties and thermal stability Aubry-Fortuna V, Barthula M, Perrossier JL, Meyer F, Demuth V, Strunk HP, Chaix-Pluchery O Journal of Vacuum Science & Technology B, 16(3), 1659, 1998 |
10 |
Electronic-Properties of Ideal and Interface-Modified Metal-Semiconductor Interfaces Monch W Journal of Vacuum Science & Technology B, 14(4), 2985, 1996 |