화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Recessed channel and/or buried source/drain structures for improvement in performance of Schottky barrier source/drain transistors with high-k gate dielectrics
Ono M, Koyama M, Nishiyama A
Solid-State Electronics, 51(5), 732, 2007
2 Degradation of current drivability of Schottky barrier source/drain transistors induced by high-k gate dielectrics and possible measures to suppress the phenomenon
Ono M, Nishiyama A, Koyama M
Solid-State Electronics, 50(5), 788, 2006