| 1 |
Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT
Vallo M, Lalinsky T, Dobrocka E, Vanko G, Vincze A, Ryger I
Applied Surface Science, 267, 159, 2013 |
| 2 |
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Lalinsky T, Vallo M, Vanko G, Dobrocka E, Vincze A, Osvald J, Ryger I, Dzuba J
Applied Surface Science, 283, 160, 2013 |
| 3 |
ZnO-based metal-semiconductor field-effect transistors with Ag-, Pt-, Pd-, and Au-Schottky gates
Frenzel H, Lajn A, von Wenckstern H, Biehne G, Hochmuth H, Grundmann M
Thin Solid Films, 518(4), 1119, 2009 |
| 4 |
A parasitic resistance measurement method exploiting gate current-density characteristics in ultra-short Schottky-gate FETs
Inoue T, Contrata W
Solid-State Electronics, 52(11), 1735, 2008 |
| 5 |
Organic light emitting transistors
Kudo K
Current Applied Physics, 5(4), 337, 2005 |
| 6 |
III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks
Kasai S, Hasegawa H
Applied Surface Science, 190(1-4), 176, 2002 |
