검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge Janardhanam V, Jyothi I, Ahn KS, Choi CJ Thin Solid Films, 546, 63, 2013 |
| 2 |
Improvement of trench MOS barrier Schottky rectifier by using high-energy counter-doping trench-bottom implantation Juang MH, Yu J, Jang SL Current Applied Physics, 11(3), 698, 2011 |
| 3 |
Schottky rectifiers fabricated on bulk GaN substrate analyzed by electron-beam induced current technique Lu H, Cao DS, Xiu XQ, Xie ZL, Zhang R, Zheng YD, Li ZH Solid-State Electronics, 52(5), 817, 2008 |
| 4 |
High breakdown voltage Schottky rectifier fabricated on bulk n-GaN substrate Zhou Y, Wang D, Ahyi C, Tin CC, Williams J, Park M, Williams NM, Hanser A Solid-State Electronics, 50(11-12), 1744, 2006 |
| 5 |
1kV 4H-SiC JBS rectifiers fabricated using an AlN capped anneal Zhu L, Shanbhag M, Chow TP, Jones KA, Ervin MH, Shah PB, Derenge MA, Vispute RD, Venkatesan T, Agarwal A Materials Science Forum, 433-4, 843, 2002 |
| 6 |
1.6 A GaN Schottky rectifiers on bulk GaN substrates Johnson JW, Lou B, Ren F, Palmer D, Pearton SJ, Park SS, Park YJ, Chyi JI Solid-State Electronics, 46(6), 911, 2002 |