검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Four-point probe characterization of 4H silicon carbide Chandra N, Sharma V, Chung GY, Schroder DK Solid-State Electronics, 64(1), 73, 2011 |
| 2 |
Role of the substrate during pseudo-MOSFET drain current transients Park K, Nayak P, Schroder DK Solid-State Electronics, 54(3), 316, 2010 |
| 3 |
Lnfluence of halo implant on leakage current and sheet resistance of ultrashallow p-n junctions Faifer VN, Schroder DK, Current MI, Clarysse T, Timans PJ, Zangerle T, Vandervorst W, Wong TMH, Moussa A, Mccoy S, Gelpey J, Lerch W, Paul S, Bolze D, Halim J Journal of Vacuum Science & Technology B, 25(5), 1588, 2007 |
| 4 |
Impact of channel carrier displacement and barrier height lowering on the low-frequency noise characteristics of surface-channel n-MOSFETs Ahsan AKM, Schroder DK Solid-State Electronics, 49(4), 654, 2005 |
| 5 |
Nonvolatile memory disturbs due to gate and junction leakage currents Park JE, Shields J, Schroder DK Solid-State Electronics, 47(5), 855, 2003 |
| 6 |
Silicon epitaxial layer lifetime characterization Park JE, Schroder DK, Tan SE, Choi BD, Fletcher M, Buczkowski A, Kirscht F Journal of the Electrochemical Society, 148(8), G411, 2001 |
| 7 |
Modeling of time dependence of hole current and prediction of Q(BD) and t(BD) for thin gate MOS devices based upon anode hole injection Quddus MT, DeMassa TA, Schroder DK, Sanchez JJ Solid-State Electronics, 45(10), 1773, 2001 |
| 8 |
Heteroepitaxial Si1-X-Ygexcy Films on (100)Si Substrates for Future Low-Power Applications Alford TL, Bair AE, Atzmon Z, Stout LM, Balster SG, Schroder DK, Roedel RJ Thin Solid Films, 270(1-2), 632, 1995 |