검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Growth mode transition and relaxation of thin InGaN layers on GaN (0001) Pristovsek M, Kadir A, Meissner C, Schwaner T, Leyer M, Stellmach J, Kneissl M, Ivaldi F, Kret S Journal of Crystal Growth, 372, 65, 2013 |
| 2 |
Single phase {11(2)over-bar2} GaN on (10(1)over-bar0) sapphire grown by metal-organic vapor phase epitaxy Ploch S, Park JB, Stellmach J, Schwaner T, Frentrup M, Niermann T, Wernicke T, Pristovsek M, Lehmann M, Kneissl M Journal of Crystal Growth, 331(1), 25, 2011 |
| 3 |
Growth mechanism of InGaN quantum dots during metalorganic vapor phase epitaxy Kadir A, Meissner C, Schwaner T, Pristovsek M, Kneissl M Journal of Crystal Growth, 334(1), 40, 2011 |