검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Co-60 gamma radiation effects on DC, RF, and pulsed I-V characteristics of AlGaN/GaN HEMTs Aktas O, Kuliev A, Kumar V, Schwindt R, Toshkov S, Costescu D, Stubbins J, Adesida I Solid-State Electronics, 48(3), 471, 2004 |
| 2 |
0.15 mu m gate-length AlGaN/GaN HEMTs with varying gate recess length Kuliev A, Kumar V, Schwindt R, Selvanathan D, Dabiran AM, Chow P, Adesida I Solid-State Electronics, 47(1), 117, 2003 |
| 3 |
High performance 0.25 mu m gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Kumar V, Kuliev A, Schwindt R, Muir M, Simin G, Yang J, Khan MA, Adesida I Solid-State Electronics, 47(9), 1577, 2003 |
| 4 |
A comparative study of surface passivation on AlGaN/GaN HEMTs Lu W, Kumar V, Schwindt R, Piner E, Adesida I Solid-State Electronics, 46(9), 1441, 2002 |