검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
The benefits and current progress of SiC SGTOs for pulsed power applications Ogunniyi A, O'Brien H, Lelis A, Scozzie C, Shaheen W, Agarwal A, Zhang J, Callanan R, Temple V Solid-State Electronics, 54(10), 1232, 2010 |
| 2 |
4H-SiC BJTs with current gain of 110 Zhang QC, Agarwal A, Burka A, Geil B, Scozzie C Solid-State Electronics, 52(7), 1008, 2008 |
| 3 |
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington Pairs Krishnaswami S, Agarwal A, Capell C, Richmond J, Ryu SH, Palmour J, Balachandran S, Chow TP, Bayne S, Geil B, Jones KA, Scozzie C Materials Science Forum, 483, 901, 2005 |