검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Etching of Si through a thick condensed XeF2 layer Sebel PGM, Hermans LJF, Beijerinck HCW Journal of Vacuum Science & Technology A, 18(5), 2090, 2000 |
| 2 |
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Temperature dependence Sebel PGM, Hermans LJF, Beijerinck HCW Journal of Vacuum Science & Technology A, 18(6), 2759, 2000 |
| 3 |
Study of the SiO2-to-Si3N4 etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the SiO2-to-Si mechanism Schaepkens M, Standaert TEFM, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 17(1), 26, 1999 |
| 4 |
Silicon etch rate enhancement by traces of metal Sebel PGM, Hermans LJF, Beijerinck HCW Journal of Vacuum Science & Technology A, 17(3), 755, 1999 |
| 5 |
Reaction layer dynamics in ion-assisted Si/XeF2 etching: Ion flux dependence Sebel PGM, Hermans LJF, Beijerinck HCW Journal of Vacuum Science & Technology A, 17(6), 3368, 1999 |
| 6 |
High density fluorocarbon etching of silicon in an inductively coupled plasma : Mechanism of etching through a thick steady state fluorocarbon layer Standaert TEFM, Schaepkens M, Rueger NR, Sebel PGM, Oehrlein GS, Cook JM Journal of Vacuum Science & Technology A, 16(1), 239, 1998 |