화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs
Darbandy G, Aghassi J, Sedlmeir J, Monga U, Garduno I, Cerdeira A, Iniguez B
Solid-State Electronics, 81, 124, 2013
2 Scaling properties of the tunneling field effect transistor (TFET): Device and circuit
Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D
Solid-State Electronics, 50(1), 44, 2006