검색결과 : 2건
No. | Article |
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1 |
Temperature dependent compact modeling of gate tunneling leakage current in double gate MOSFETs Darbandy G, Aghassi J, Sedlmeir J, Monga U, Garduno I, Cerdeira A, Iniguez B Solid-State Electronics, 81, 124, 2013 |
2 |
Scaling properties of the tunneling field effect transistor (TFET): Device and circuit Nirschl T, Henzler S, Fischer J, Fulde M, Bargagli-Stoffi A, Sterkel M, Sedlmeir J, Weber C, Heinrich R, Schaper U, Einfeld J, Neubert R, Feldmann U, Stahrenberg K, Ruderer E, Georgakos G, Huber A, Kakoschke R, Hansch W, Schmitt-Landsiedel D Solid-State Electronics, 50(1), 44, 2006 |