화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Impact of source/drain and bulk engineering on LFN performance of n- and p-MOSFET
Ioannidis EG, Rohracher K, Roger F, Pflanzl WC, Leisenberger FP, Wachmann E, Seebacher E, Vescoli V
Solid-State Electronics, 135, 1, 2017
2 Impact of hydrogen anneal on low frequency noise of n- and p-MOSFET
Ioannidis EG, Pflanzl WC, Stueckler E, Vescoli V, Carniello S, Seebacher E
Solid-State Electronics, 126, 158, 2016
3 Methodology for 1/f noise parameter extraction for high-voltage MOSFETs
Mavredakis N, Pflanzl W, Seebacher E, Bucher M
Solid-State Electronics, 103, 202, 2015