검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Investigation of mass transport during SiCPVT growth using digital X-ray imaging, C-13 labeling of source material and numerical modeling Wellmann PJ, Herro Z, Selder M, Durst F, Pusche R, Hundhausen M, Ley L, Winnacker A Materials Science Forum, 433-4, 9, 2002 |
| 2 |
Impact of source material on silicon carbide vapor transport growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Journal of Crystal Growth, 225(2-4), 312, 2001 |
| 3 |
Global modeling of the SiC sublimation growth process: prediction of thermoelastic stress and control of growth conditions Selder M, Kadinski L, Durst F, Hofmann D Journal of Crystal Growth, 226(4), 501, 2001 |
| 4 |
Impact of SiC source material on temperature field and vapor transport during SiCPVT crystal growth process Wellmann PJ, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Materials Science Forum, 353-356, 11, 2001 |
| 5 |
Defect reduction in sublimation grown silicon carbide crystals by adjustment of thermal boundary conditions Schmitt E, Rasp M, Weber AD, Kolbl M, Eckstein R, Kadinski L, Selder M Materials Science Forum, 353-356, 15, 2001 |
| 6 |
Numerical simulation of thermal stress formation during PVT-growth of SiC bulk crystals Selder M, Kadinski L, Durst F, Straubinger TL, Wellmann PJ, Hofmann D Materials Science Forum, 353-356, 65, 2001 |
| 7 |
Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT Selder M, Kadinski L, Makarov Y, Durst F, Wellmann P, Straubinger T, Hofmann D, Karpov S, Ramm M Journal of Crystal Growth, 211(1-4), 333, 2000 |
| 8 |
In situ visualization and analysis of silicon carbide physical vapor transport growth using digital X-ray imaging Wellmann PJ, Bickermann M, Hofmann D, Kadinski L, Selder M, Straubinger TL, Winnacker A Journal of Crystal Growth, 216(1-4), 263, 2000 |
| 9 |
Global numerical simulation of heat and mass transfer during SiC bulk crystal PVT growth Selder M, Kadinski L, Durst F, Straubinger T, Hofmann D, Wellmann P Materials Science Forum, 338-3, 31, 2000 |
| 10 |
Growth rate control in SiC-physical vapor transport method through heat transfer modeling and non-stationary process conditions Straubinger TL, Bickermann M, Grau M, Hofmann D, Kadinski L, Muller SG, Selder M, Wellmann PJ, Winnacker A Materials Science Forum, 338-3, 39, 2000 |