| 1 |
Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays
Kim B, Kim SW, Jang H, Kim JH, Koo S, Kim DH, Min BG, Ko DH
Thin Solid Films, 557, 55, 2014 |
| 2 |
Understanding the growth of p-doped 4H-SiC layers using vapour-liquid-solid transport
Vo-Ha A, Carole D, Lazar M, Tournier D, Cauwet F, Souliere V, Thierry-Jebali N, Brosselard P, Planson D, Brylinski C, Ferro G
Thin Solid Films, 548, 125, 2013 |
| 3 |
Low temperature Si:C co-flow and hybrid process using Si3H8/Cl-2
Bauer M, Thomas SG
Thin Solid Films, 520(8), 3133, 2012 |
| 4 |
Low temperature catalyst enhanced etch process with high etch rate selectivity for amorphous silicon based alloys over single-crystalline silicon based alloys
Bauer M, Thomas SG
Thin Solid Films, 520(8), 3139, 2012 |
| 5 |
Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfaces
Bauer M, Thomas SG
Thin Solid Films, 520(8), 3144, 2012 |
| 6 |
Growth of high Ge content SiGe on (110) oriented Si wafers
Hikavyy A, Vanherle W, Vincent B, Dekoster J, Bender H, Moussa A, Witters L, Hoffman T, Loo R
Thin Solid Films, 520(8), 3179, 2012 |
| 7 |
Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETs
Moriyama Y, Kamimuta Y, Ikeda K, Tezuka T
Solid-State Electronics, 60(1), 89, 2011 |
| 8 |
Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET
Tachi K, Vulliet N, Barraud S, Kakushima K, Iwai H, Cristoloveanu S, Ernst T
Solid-State Electronics, 65-66, 16, 2011 |
| 9 |
Effect of rotation, gate-dielectric and SEG on the noise behavior of advanced SOI MuGFETs
Put S, Mehta H, Collaert N, Van Uffelen M, Leroux P, Claeys C, Lukyanchikova N, Simoen E
Solid-State Electronics, 54(2), 178, 2010 |
| 10 |
Novel chemical precursors and novel CVD strategies enabling low temperature epitaxy of Si and Si:C alloys
Bauer M, Thomas SG
Thin Solid Films, 518, S200, 2010 |
