화학공학소재연구정보센터
검색결과 : 2건
No. Article
1 Back-gated InGaAs-on-insulator lateral N+NN+ MOSFET: Fabrication and typical conduction mechanisms
Park HJ, Pirro L, Czornomaz L, Ionica I, Bawedin M, Djara V, Deshpande V, Cristoloveanu S
Solid-State Electronics, 128, 80, 2017
2 Dopant distribution in selectively regrown InP : Fe studied by time-resolved photoluminescence
Gaarder A, Marcinkevicius S, Messmer ER, Lourdudoss S
Journal of Crystal Growth, 226(4), 451, 2001