화학공학소재연구정보센터
검색결과 : 31건
No. Article
1 Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms
Bartl JD, Scarbolo P, Brandalise D, Stutzmann M, Tornow M, Selmi L, Cattani-Scholz A
Langmuir, 35(9), 3272, 2019
2 Digital and analog TFET circuits: Design and benchmark
Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L
Solid-State Electronics, 146, 50, 2018
3 Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits
Strangio S, Palestri P, Lanuzza M, Esseni D, Crupi F, Selmi L
Solid-State Electronics, 128, 37, 2017
4 Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M
Solid-State Electronics, 115, 92, 2016
5 Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs
Ding LL, Gnani E, Gerardin S, Bagatin M, Driussi F, Selmi L, Le Royer C, Paccagnella A
Solid-State Electronics, 115, 146, 2016
6 Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays
Laborde C, Pittino F, Verhoeven HA, Lemay SG, Selmi L, Jongsma MA, Widdershoven FP
Nature Nanotechnology, 10(9), 791, 2015
7 The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs
Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L
Solid-State Electronics, 108, 90, 2015
8 Experimental demonstration of improved analog device performance of nanowire-TFETs
Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S
Solid-State Electronics, 113, 179, 2015
9 Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors
Pittino F, Palestri P, Scarbolo P, Esseni D, Selmi L
Solid-State Electronics, 98, 63, 2014
10 Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model
Gudmundsson V, Palestri P, Hellstrom PE, Selmi L, Ostling M
Solid-State Electronics, 79, 172, 2013