검색결과 : 31건
No. | Article |
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1 |
Role of Different Receptor-Surface Binding Modes in the Morphological and Electrochemical Properties of Peptide-Nucleic-Acid-Based Sensing Platforms Bartl JD, Scarbolo P, Brandalise D, Stutzmann M, Tornow M, Selmi L, Cattani-Scholz A Langmuir, 35(9), 3272, 2019 |
2 |
Digital and analog TFET circuits: Design and benchmark Strangio S, Settino F, Palestri P, Lanuzza M, Crupi F, Esseni D, Selmi L Solid-State Electronics, 146, 50, 2018 |
3 |
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits Strangio S, Palestri P, Lanuzza M, Esseni D, Crupi F, Selmi L Solid-State Electronics, 128, 37, 2017 |
4 |
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas G, Caruso E, Baccarani G, Czornomaz L, Daix N, Esseni D, Gnani E, Gnudi A, Grassi R, Luisier M, Markussen T, Osgnach P, Palestri P, Schenk A, Selmi L, Sousa M, Stokbro K, Visciarelli M Solid-State Electronics, 115, 92, 2016 |
5 |
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs Ding LL, Gnani E, Gerardin S, Bagatin M, Driussi F, Selmi L, Le Royer C, Paccagnella A Solid-State Electronics, 115, 146, 2016 |
6 |
Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays Laborde C, Pittino F, Verhoeven HA, Lemay SG, Selmi L, Jongsma MA, Widdershoven FP Nature Nanotechnology, 10(9), 791, 2015 |
7 |
The impact of interface states on the mobility and drive current of In0.53Ga0.47As semiconductor n-MOSFETs Osgnach P, Caruso E, Lizzit D, Palestri P, Esseni D, Selmi L Solid-State Electronics, 108, 90, 2015 |
8 |
Experimental demonstration of improved analog device performance of nanowire-TFETs Schulte-Braucks C, Richter S, Knoll L, Selmi L, Zhao QT, Mantl S Solid-State Electronics, 113, 179, 2015 |
9 |
Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors Pittino F, Palestri P, Scarbolo P, Esseni D, Selmi L Solid-State Electronics, 98, 63, 2014 |
10 |
Simulation of low Schottky barrier MOSFETs using an improved Multi-subband Monte Carlo model Gudmundsson V, Palestri P, Hellstrom PE, Selmi L, Ostling M Solid-State Electronics, 79, 172, 2013 |