검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction Fedler F, Hauenstein RJ, Klausing H, Mistele D, Semchinova O, Aderhold J, Graul J Journal of Crystal Growth, 241(4), 535, 2002 |
| 2 |
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates Aderhold J, Davydov VY, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Stemmer J, Graul J Journal of Crystal Growth, 222(4), 701, 2001 |
| 3 |
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films Emtsev VV, Davydov VY, Lundin VV, Poloskin DS, Aderhold J, Klausing H, Mistele D, Rotter T, Stemmer J, Fedler F, Semchinova O, Graul J Journal of Crystal Growth, 210(1-3), 273, 2000 |
| 4 |
Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications Verozubova GA, Gribenyukov AI, Korotkova VV, Semchinova O, Uffmann D Journal of Crystal Growth, 213(3-4), 334, 2000 |
| 5 |
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy Stemmer J, Fedler F, Klausing H, Mistele D, Rotter T, Semchinova O, Aderhold J, Sanchez AM, Pacheco FJ, Molina SI, Fehrer M, Hommel D, Graul J Journal of Crystal Growth, 216(1-4), 15, 2000 |