| 1 |
Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs
Galiev GB, Vasilevskii IS, Klimov EA, Pushkarev SS, Klochkov AN, Maltsev PP, Presniakov MY, Trunkin IN, Vasiliev AL
Journal of Crystal Growth, 392, 11, 2014 |
| 2 |
Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
Galiev GB, Vasil'evskii IS, Pushkarev SS, Klimov EA, Imamov RM, Buffat PA, Dwir B, Suvorova EI
Journal of Crystal Growth, 366, 55, 2013 |
| 3 |
Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance
Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC
Journal of Crystal Growth, 378, 92, 2013 |
| 4 |
Achieving very high drain current of 1.23 mA/mu m in a 1-mu m-gate-length self-aligned inversion-channel MBE-Al2O3/Ga2O3(Gd2O3)/In0.75Ga0.25As MOSFET
Lin TD, Chang P, Wu YD, Chiu HC, Kwo J, Hong M
Journal of Crystal Growth, 323(1), 518, 2011 |
| 5 |
Growth of bulk single crystals under applied magnetic field by liquid phase electroepitaxy
Sheibani H, Dost S, Sakai S, Lent B
Journal of Crystal Growth, 258(3-4), 283, 2003 |
| 6 |
Modification of emission wavelength of self-assembled In(Ga)As/GaAs quantum dots covered by InxGa1-xAs(0 <= x <= 0.3) layer
Niu ZC, Wang XD, Miao ZH, Feng SL
Journal of Crystal Growth, 227, 1062, 2001 |
