| 1 |
A Universal Blocking-Module-Based Average Value Model of Modular Multilevel Converters With Different Types of Submodules
Meng XK, Han JT, Bieber LM, Wang LW, Li W, Belanger J
IEEE Transactions on Energy Conversion, 35(1), 53, 2020 |
| 2 |
Modeling of InGaP/InGaAs-GaAsP/Ge multiple quantum well solar cell to improve efficiency for space applications
Kotamraju S, Sukeerthi M, Puthanveettil SE
Solar Energy, 186, 328, 2019 |
| 3 |
Two-dimensional lead-free hybrid halide perovskite using superatom anions with tunable electronic properties
Zhou TW, Wang M, Zang ZG, Tang XS, Fang L
Solar Energy Materials and Solar Cells, 191, 33, 2019 |
| 4 |
Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells
Nicosia G, Goda A, Spinelli AS, Compagnoni CM
Solid-State Electronics, 151, 18, 2019 |
| 5 |
Arithmetic and experimental approach to effect of visible light absorption on silicone plate in high-power LED module
Jung JH, Kim HJ
International Journal of Heat and Mass Transfer, 119, 400, 2018 |
| 6 |
Degradation analysis of 3J InGaP/InGaAs/InGaAsN solar cell due to irradiation induced defects with a comparative study on bottom homo and hetero InGaAsN subcell
Sukeerthi M, Kotamraju S, Meetei R, Rao PN
Solar Energy, 174, 728, 2018 |
| 7 |
Front contact optimization of industrial scale CIGS solar cells for low solar concentration using 2D physical modeling
Delgado-Sanchez JM, Lopez-Gonzalez JM, Orpella A, Sanchez-Cortezon E, Alba MD, Lopez-Lopez C, Alcubilla R
Renewable Energy, 101, 90, 2017 |
| 8 |
Analysis of the dynamic avalanche of carrier stored trench bipolar transistor (CSTBT) during clamped inductive turn-off transient
Xue P, Fu GC
Solid-State Electronics, 129, 35, 2017 |
| 9 |
Small signal modeling of high electron mobility transistors on silicon and silicon carbide substrate with consideration of substrate loss mechanism
Sahoo AK, Subramani NK, Nallatamby JC, Sylvain L, Loyez C, Quere R, Medjdoub F
Solid-State Electronics, 115, 12, 2016 |
| 10 |
On the analogy of the potential barrier of trenched JFET and JBS devices
Bellone S, Di Benedetto L, Licciardo GD
Solid-State Electronics, 120, 6, 2016 |
