검색결과 : 6건
No. | Article |
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1 |
On the analogy of the potential barrier of trenched JFET and JBS devices Bellone S, Di Benedetto L, Licciardo GD Solid-State Electronics, 120, 6, 2016 |
2 |
A model of the off-behaviour of 4H-SiC power JFETs Bellone S, Di Benedetto L, Licciardo GD Solid-State Electronics, 109, 17, 2015 |
3 |
80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices Weiss M, Fregonese S, Santorelli M, Sahoo AK, Maneux C, Zimmer T Solid-State Electronics, 84, 74, 2013 |
4 |
Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P Solid-State Electronics, 87, 51, 2013 |
5 |
A new analytical compact model for two-dimensional finger photodiodes Naeve T, Hohenbild M, Seegebrecht P Solid-State Electronics, 52(2), 299, 2008 |
6 |
Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI Benson J, Redman-White W, D'Halleweyn NV, Easson CA, Uren MJ Solid-State Electronics, 46(4), 529, 2002 |