화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 On the analogy of the potential barrier of trenched JFET and JBS devices
Bellone S, Di Benedetto L, Licciardo GD
Solid-State Electronics, 120, 6, 2016
2 A model of the off-behaviour of 4H-SiC power JFETs
Bellone S, Di Benedetto L, Licciardo GD
Solid-State Electronics, 109, 17, 2015
3 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
Weiss M, Fregonese S, Santorelli M, Sahoo AK, Maneux C, Zimmer T
Solid-State Electronics, 84, 74, 2013
4 Monte Carlo analysis of the dynamic behavior of III-V MOSFETs for low-noise RF applications
Shi M, Saint-Martin J, Bournel A, Querlioz D, Wichmann N, Bollaert S, Danneville F, Dollfus P
Solid-State Electronics, 87, 51, 2013
5 A new analytical compact model for two-dimensional finger photodiodes
Naeve T, Hohenbild M, Seegebrecht P
Solid-State Electronics, 52(2), 299, 2008
6 Body charge modelling for accurate simulation of small-signal behaviour in floating body SOI
Benson J, Redman-White W, D'Halleweyn NV, Easson CA, Uren MJ
Solid-State Electronics, 46(4), 529, 2002