검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
The controlled growth of GaN microrods on Si(111) substrates by MOCVD Foltynski B, Garro N, Vallo M, Finken M, Giesen C, Kalisch H, Vescan A, Cantarero A, Heuken M Journal of Crystal Growth, 414, 200, 2015 |
| 2 |
Oxygen-radical-assisted pulsed-laser deposition of beta-Ga2O3 and beta-(AlxGa1-x)(2)O-3 films Wakabayashi R, Oshima T, Hattori M, Sasaki K, Masui T, Kuramata A, Yamakoshi S, Yoshimatsu K, Ohtomo A Journal of Crystal Growth, 424, 77, 2015 |
| 3 |
Low temperature growth of europium doped Ga2O3 luminescent films Chen ZW, Saito K, Tanaka T, Nishio M, Arita M, Guo QX Journal of Crystal Growth, 430, 28, 2015 |
| 4 |
Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE Li SF, Wang X, Mohajerani MS, Fundling S, Erenburg M, Wei JD, Wehmann HH, Waag A, Mandl M, Bergbauer W, Strassburg M Journal of Crystal Growth, 364, 149, 2013 |
| 5 |
Global analysis of GaN growth using a solution technique Kashiwagi D, Gejo R, Kangawa Y, Liu L, Kawamura F, Mori Y, Sasaki T, Kakimoto K Journal of Crystal Growth, 310(7-9), 1790, 2008 |
| 6 |
Evaluation of incorporation efficiency of group V source gases in metal organic chemical vapor deposition of GaInNAs for high quality 1.21 mu m quantum-well ridge wave guide lasers Kushibe M, Hashimoto R, Ezaki M, Hatakoshi GI, Nishioka M, Arakawa Y Journal of Crystal Growth, 298, 658, 2007 |
| 7 |
Donors in hydride-vapor-phase epitaxial GaN Freitas JA, Moore WJ, Shanabrook BV, Braga GCB, Lee SK, Park SS, Han JY, Koleske DD Journal of Crystal Growth, 246(3-4), 307, 2002 |