| 1 |
Simulation of an efficient silicon heterostructure solar cell concept featuring molybdenum oxide carrier-selective contact
Mehmood H, Nasser H, Tauqeer T, Hussain S, Ozkol E, Turan R
International Journal of Energy Research, 42(4), 1563, 2018 |
| 2 |
Effect of grain size evolution in an Au-wire ball on debonding failure with the Al-pad in semiconductor devices
Lee SM, Kim SB
Thin Solid Films, 641, 69, 2017 |
| 3 |
A comparative study of electron transport in benzene molecule covalently bonded to gold and silicon electrodes for pioneering the electron transport properties of silicon quantum dot-molecule hybrid polymers
Choi JK, Pham HT, Jeong HD
Current Applied Physics, 15(8), 877, 2015 |
| 4 |
Formation of dendritic crystal structures in thin silicon films on silicon dioxide by carbon ion implantation and high intensity large area flash lamp irradiation
Voelskow M, Endler R, Schumann T, Mucklich A, Ou X, Liepack EH, Gebel T, Peeva A, Skorupa W
Journal of Crystal Growth, 388, 70, 2014 |
| 5 |
Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field
Chen JC, Chiang PY, Chang CH, Teng YY, Huang CC, Chen CH, Liu CC
Journal of Crystal Growth, 401, 813, 2014 |
| 6 |
Trapezoid defect in 4H-SiC epilayers
Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M
Journal of Crystal Growth, 338(1), 16, 2012 |
| 7 |
Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique
Baba M, Toh K, Toko K, Saito N, Yoshizawa N, Jiptner K, Sekiguchi T, Hara KO, Usami N, Suemasu T
Journal of Crystal Growth, 348(1), 75, 2012 |
| 8 |
The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
Arivanandhan M, Gotoh R, Fujiwara K, Ozawa T, Hayakawa Y, Uda S
Journal of Crystal Growth, 321(1), 24, 2011 |
| 9 |
Ga segregation during Czochralski-Si crystal growth with Ge codoping
Gotoh R, Arivanandhan M, Fujiwara K, Uda S
Journal of Crystal Growth, 312(20), 2865, 2010 |
| 10 |
Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application
Tsukada D, Matsumoto Y, Sasaki R, Takeishi M, Saito T, Usami N, Suemasu T
Journal of Crystal Growth, 311(14), 3581, 2009 |
