검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
GaN quantum dot polarity determination by X-ray photoelectron diffraction Romanyuk O, Bartos I, Brault J, De Mierry P, Paskova T, Jiricek P Applied Surface Science, 389, 1156, 2016 |
| 2 |
Improved crystal quality of semipolar (10(1)over-bar3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer Lee HJ, Bae SY, Lekhal K, Mitsunari T, Tamura A, Honda Y, Amano H Journal of Crystal Growth, 454, 114, 2016 |
| 3 |
Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres Yang JK, Wei TB, Huo ZQ, Hu Q, Zhang YH, Duan RF, Wang JX Journal of Crystal Growth, 387, 101, 2014 |
| 4 |
Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters Jung S, Song KR, Lee SN, Kim H Advanced Materials, 25(32), 4470, 2013 |
| 5 |
Fabrication and characterization of high efficiency green nanopillar LED Ju JW, Baek JH, Lee SJ, Jeon DW, Park JW, Choi JH, Jang LW, Lee IH Journal of Crystal Growth, 370, 332, 2013 |
| 6 |
Chemical lift-off of (11-22) semipolar GaN using periodic triangular cavities Jeon DW, Lee SJ, Jeong T, Baek JH, Park JW, Jang LW, Kim M, Lee IH, Ju JW Journal of Crystal Growth, 338(1), 134, 2012 |
| 7 |
Electroluminescence enhancement of (11(2)over-bar2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates Bae SY, Lee DS, Kong BH, Cho HK, Kaeding JF, Nakamura S, DenBaars SP, Speck JS Current Applied Physics, 11(3), 954, 2011 |
| 8 |
Stacking faults blocking process in (11-22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy Kriouche N, Vennegues P, Nemoz M, Nataf G, De Mierry P Journal of Crystal Growth, 312(19), 2625, 2010 |