검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates Kucharski R, Zajac M, Puchalski A, Sochacki T, Bockowski M, Weyher JL, Iwinska M, Serafinczuk J, Kudrawiec R, Siemiatkowski Z Journal of Crystal Growth, 427, 1, 2015 |
| 2 |
Anisotropy of strain relaxation in heterogeneous GaInNAs layers grown by AP-MOVPE Gelczuk L, Pucicki D, Serafinczuk J, Dabrowska-Szata M, Dluzewski P Journal of Crystal Growth, 430, 14, 2015 |
| 3 |
Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method Rudzinski M, Kudrawiec R, Janicki L, Serafinczuk J, Kucharski R, Zajac M, Misiewicz J, Doradzinski R, Dwilinski R, Strupinski W Journal of Crystal Growth, 328(1), 5, 2011 |
| 4 |
Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism Ashraf H, Kudrawiec R, Weyher JL, Serafinczuk J, Misiewicz J, Hageman PR Journal of Crystal Growth, 312(16-17), 2398, 2010 |
| 5 |
Recent achievements in AMMONO-bulk method Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L, Kucharski R, Zajac M, Rudzinski M, Kudrawiec R, Serafinczuk J, Strupinski W Journal of Crystal Growth, 312(18), 2499, 2010 |
| 6 |
Influence of Annealing on Excitation of Terbium Luminescence in YAlO3 Films Deposited onto Porous Anodic Alumina Podhorodecki A, Banski M, Misiewicz J, Serafinczuk J, Gaponenkoc NV Journal of the Electrochemical Society, 157(6), H628, 2010 |
| 7 |
GaN ceramics obtained by fusing of nanocrystalline GaN powder at high pressures and temperatures as substrate for growth of GaN epilayers Podhorodecki A, Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Serafinczuk J, Strek W Journal of Crystal Growth, 310(5), 940, 2008 |
| 8 |
Anisotropic misfit strain relaxation in lattice mismatched InGaAs/GaAs heterostructures grown by MOVPE Gelczuk L, Serafinczuk J, Darowska-Szata M, Dluzewski P Journal of Crystal Growth, 310(12), 3014, 2008 |
| 9 |
Properties of MOVPE GaN grown on ZnO deposited on Si(001) and Si(111) substrates Paszkiewicz R, Paszkiewicz B, Wosko M, Szyszka A, Marciniak L, Prazmowska J, Macherzynski W, Serafinczuk J, Kozlowski J, Tlaczala M, Kovac J, Novotny I, Skriniarova J, Hasko D Journal of Crystal Growth, 310(23), 4891, 2008 |
| 10 |
Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate Nyk M, Kudrawiec R, Misiewicz J, Paszkiewicz R, Korbutowicz R, Kozlowski J, Serafinczuk J, Strek W Journal of Crystal Growth, 277(1-4), 149, 2005 |