화학공학소재연구정보센터
검색결과 : 16건
No. Article
1 From a Cerium-Doped Polynuclear Bismuth Oxido Cluster to beta-Bi2O3:Ce
Weber M, Ruffer T, Speck F, Gohler F, Weimann DP, Schalley CA, Seyller T, Lang H, Mehring M
Inorganic Chemistry, 59(6), 3353, 2020
2 Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene
Kim KS, Walter AL, Moreschini L, Seyller T, Horn K, Rotenberg E, Bostwick A
Nature Materials, 12(10), 887, 2013
3 Bottom-gated epitaxial graphene
Waldmann D, Jobst J, Speck F, Seyller T, Krieger M, Weber HB
Nature Materials, 10(5), 357, 2011
4 Observation of Plasmarons in Quasi-Freestanding Doped Graphene
Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, MacDonald AH, Rotenberg E
Science, 328(5981), 999, 2010
5 Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Rohrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T
Nature Materials, 8(3), 203, 2009
6 Origin of the energy bandgap in epitaxial graphene
Rotenberg E, Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K
Nature Materials, 7(4), 258, 2008
7 Hydrogen-saturated SiC-surfaces: Model systems for studies of passivation, reconstruction, and interface formation
Seyller T
Materials Science Forum, 483, 535, 2005
8 Surface band structure studies of Si rich reconstructions on 4H-SiC (1100)
Emtsev K, Seyller T, Ley L, Tadich A, Broekman L, Huwald E, Riley JD, Leckey RGC
Materials Science Forum, 483, 547, 2005
9 The atomic structure of the hydrogen saturated a-planes of 4H-SiC
Seyller T, Sieber N, Emtsev KV, Graupner R, Ley L, Tadich A, James D, Riley JD, Leckey RCG, Polcik M
Materials Science Forum, 457-460, 395, 2004
10 Initial stages of thermal oxidation of 4H-SiC(11(2)over-bar0) studied by photoelectron spectroscopy
Seyller T, Emtsev KV, Graupner R, Ley L
Materials Science Forum, 457-460, 1317, 2004