화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Superconducting platinum suicide for electron cooling in silicon
Prest MJ, Richardson-Bullock JS, Zhao QT, Muhonen JT, Gunnarsson D, Prunnila M, Shah VA, Whall TE, Parker EHC, Leadley DR
Solid-State Electronics, 103, 15, 2015
2 Comparison of electron-phonon and hole-phonon energy loss rates in silicon
Richardson-Bullock JS, Prest MJ, Shah VA, Gunnarsson D, Prunnila M, Dobbie A, Myronov M, Morris RJH, Whall TE, Parker EHC, Leadley DR
Solid-State Electronics, 103, 40, 2015
3 Electrical properties and strain distribution of Ge suspended structures
Shah VA, Rhead SD, Finch J, Myronov M, Reparaz JS, Morris RJ, Wilson NR, Kachkanov V, Dolbnya IP, Halpin JE, Patchett D, Allred P, Colston G, Sawhney KJS, Torres CMS, Leadley DR
Solid-State Electronics, 108, 13, 2015
4 Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry
Shah VA, Myronov M, Rhead SD, Halpin JE, Shchepetov A, Prest MJ, Prunnila M, Whall TE, Parker EHC, Leadley DR
Solid-State Electronics, 98, 93, 2014
5 Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration
Shah VA, Dobbie A, Myronov M, Leadley DR
Thin Solid Films, 520(8), 3227, 2012
6 High quality relaxed Ge layers grown directly on a Si(001) substrate
Shah VA, Dobbie A, Myronov M, Leadley DR
Solid-State Electronics, 62(1), 189, 2011
7 Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001)
Shah VA, Dobbie A, Myronov M, Leadley DR
Thin Solid Films, 519(22), 7911, 2011
8 High Quality Strained Ge Epilayers on a Si0.2Ge0.8/Ge/Si(100) Global Strain-Tuning Platform
Myronov M, Dobbie A, Shah VA, Liu XC, Nguyen VH, Leadley DR
Electrochemical and Solid State Letters, 13(11), H388, 2010