검색결과 : 8건
No. | Article |
---|---|
1 |
Superconducting platinum suicide for electron cooling in silicon Prest MJ, Richardson-Bullock JS, Zhao QT, Muhonen JT, Gunnarsson D, Prunnila M, Shah VA, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 103, 15, 2015 |
2 |
Comparison of electron-phonon and hole-phonon energy loss rates in silicon Richardson-Bullock JS, Prest MJ, Shah VA, Gunnarsson D, Prunnila M, Dobbie A, Myronov M, Morris RJH, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 103, 40, 2015 |
3 |
Electrical properties and strain distribution of Ge suspended structures Shah VA, Rhead SD, Finch J, Myronov M, Reparaz JS, Morris RJ, Wilson NR, Kachkanov V, Dolbnya IP, Halpin JE, Patchett D, Allred P, Colston G, Sawhney KJS, Torres CMS, Leadley DR Solid-State Electronics, 108, 13, 2015 |
4 |
Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry Shah VA, Myronov M, Rhead SD, Halpin JE, Shchepetov A, Prest MJ, Prunnila M, Whall TE, Parker EHC, Leadley DR Solid-State Electronics, 98, 93, 2014 |
5 |
Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration Shah VA, Dobbie A, Myronov M, Leadley DR Thin Solid Films, 520(8), 3227, 2012 |
6 |
High quality relaxed Ge layers grown directly on a Si(001) substrate Shah VA, Dobbie A, Myronov M, Leadley DR Solid-State Electronics, 62(1), 189, 2011 |
7 |
Effect of layer thickness on structural quality of Ge epilayers grown directly on Si(001) Shah VA, Dobbie A, Myronov M, Leadley DR Thin Solid Films, 519(22), 7911, 2011 |
8 |
High Quality Strained Ge Epilayers on a Si0.2Ge0.8/Ge/Si(100) Global Strain-Tuning Platform Myronov M, Dobbie A, Shah VA, Liu XC, Nguyen VH, Leadley DR Electrochemical and Solid State Letters, 13(11), H388, 2010 |