화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Effects of shallow trench isolation on low frequency noise characteristics of source-follower transistors in CMOS image sensors
Kwon SK, Kwon HM, Choi WI, Song HS, Lee HD
Solid-State Electronics, 119, 29, 2016
2 Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern
Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN
Thin Solid Films, 557, 323, 2014
3 STI-to-gate distance effects on flicker noise characteristics in 0.13 mu m CMOS
Chan CY, Huang YC, Chen JW, Hsu SSH, Juang YZ
Solid-State Electronics, 52(8), 1182, 2008