검색결과 : 19건
| No. | Article |
|---|---|
| 1 |
Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques Redolfi A, Kubicek S, Rooyackers R, Kim MS, Sleeckx E, Devriendt K, Shamiryan D, Vandeweyer T, Delande T, Horiguchi N, Togo M, Wouters JMD, Jurczak M, Hoffmann T, Cockburn A, Gravey V, Diehl DL Solid-State Electronics, 71, 106, 2012 |
| 2 |
Effects of He Plasma Pretreatment on Low-k Damage during Cu Surface Cleaning with NH3 Plasma Urbanowicz AM, Shamiryan D, Zaka A, Verdonck P, De Gendt S, Baklanov MR Journal of the Electrochemical Society, 157(5), H565, 2010 |
| 3 |
Metrology for Implanted Si Substrate Loss Studies Radisic D, Shamiryan D, Mannaert G, Boullart W, Rosseel E, Bogdanowicz J, Goossens J, Marrant K, Bender H, Sonnemans R, Berry I Journal of the Electrochemical Society, 157(5), H580, 2010 |
| 4 |
TaN metal gate etch mechanisms in BCl3-based plasmas Shamiryan D, Danila A, Baklanov MR, Boullart W Journal of Vacuum Science & Technology A, 28(2), 302, 2010 |
| 5 |
Effect of energetic ions on plasma damage of porous SiCOH low-k materials Kunnen E, Baklanov MR, Franquet A, Shamiryan D, Rakhimova TV, Urbanowicz AM, Struyf H, Boullart W Journal of Vacuum Science & Technology B, 28(3), 450, 2010 |
| 6 |
Impact of metal etch residues on etch species density and uniformity Dictus D, Shamiryan D, Paraschiv V, Boullart W, De Gendt S, Vinckier C Journal of Vacuum Science & Technology B, 28(4), 789, 2010 |
| 7 |
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS Shamiryan D, Baklanov M, Claes M, Boullart W, Paraschiv V Chemical Engineering Communications, 196(12), 1475, 2009 |
| 8 |
Effect of Porogen Residue on Chemical, Optical, and Mechanical Properties of CVD SiCOH Low-k Materials Urbanowicz AM, Vanstreels K, Shamiryan D, De Gendt S, Baklanova MR Electrochemical and Solid State Letters, 12(8), H292, 2009 |
| 9 |
Using ellipsometry for assessment of TiN surface roughness after plasma etch Shamiryan D, Paraschiv V, Dictus D, Baklanov MR, Beckx S, Boullart W Journal of the Electrochemical Society, 155(2), H108, 2008 |
| 10 |
Profile control of novel non-Si gates using BCl3/N-2 plasma Shamiryan D, Paraschiv V, Eslava-Fernandez S, Demand M, Baklanov M, Beckx S, Boullart W Journal of Vacuum Science & Technology B, 25(3), 739, 2007 |