화학공학소재연구정보센터
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No. Article
1 Triple-axis X-ray reciprocal space mapping of InyGa1-yAs thermophotovoltaic diodes grown on (100) InP substrates
Dashiell MW, Ehsani H, Sander PC, Newman FD, Wang CA, Shellenbarger ZA, Donetski D, Gu N, Anikeev S
Solar Energy Materials and Solar Cells, 92(9), 1003, 2008
2 Effect of substrate surface defects and Te dopant concentration on crystalline quality and electrical characteristics of AlGaAsSb epitaxial layers
Ehsani H, Lewis N, Nichols GJ, Danielson L, Dashiell MW, Shellenbarger ZA, Wang CA
Journal of Crystal Growth, 291(1), 77, 2006
3 Liquid-phase epitaxy of low-bandgap III-V antimonides for thermophotovoltaic devices
Mauk MG, Shellenbarger ZA, Cox JA, Sulima OV, Bett AW, Mueller RL, Sims PE, McNeely JB, DiNetta LC
Journal of Crystal Growth, 211(1-4), 189, 2000
4 Development of a modular, large-scale, high-throughput semicontinuous-mode liquid-phase epitaxy system
Mauk MG, Shellenbarger ZA, Sims PE, Bloothoofd W, McNeely JB, Collins SR, Rabinowitz PI, Hall RB, DiNetta LC, Barnett AM
Journal of Crystal Growth, 211(1-4), 411, 2000
5 Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb
Snyder PG, Tiwald TE, Thompson DW, Ianno NJ, Woollam JA, Mauk MG, Shellenbarger ZA
Thin Solid Films, 313-314, 667, 1998